TLP351 (F) Photocoupler, IGBT / MOSFET Gate-Drive, Toshiba.

The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.

• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Option(D4) TLP351 (F)
• VDE Approved : DIN EN60747-5-2
  Maximum Operating Insulation Voltage : 890VPK
  Highest Permissible Over Voltage : 4000VPK

A Trust To Your Business.

So After many years of development, we have a large stock in stock, reasonable price and fast delivery. Therefore we stock millions of hard-to-find parts from trusted resources. Moreover Megatronika has QA specialist that only pass those products which fits in our quality supply demand. So Either you purchase an item from us, or sign a contract for enterprise solutions. However for more bulk product purchase or just single item purchase. In addition to this we take care of all your needs and quality aspects throughout the process